VS-MBR3045CTPbF, VS-MBR3045CT-N3
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Vishay Semiconductors
Revision: 26-Aug-11
2
Document Number: 94292
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
VFM (1)
30 A
TJ
= 25 °C
0.76
V
20 A
TJ
= 125 °C
30 A 0.72
0.6
Maximum instantaneous reverse current
IRM (1)
TJ
= 25 °C
Rated DC voltage
1
mA
TJ
= 125 °C
100
Threshold voltage
VF(TO)
TJ
= T
J
maximum
0.29 V
Forward slope resistance
rt
13.6
m?
Maximum junction capacitance
CT
VR
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
800 pF
Typical series inductance
LS
Measured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt
Rated VR
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range
TJ
- 65 to 150
°C
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation 1.5
°C/W
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
Only for TO-220
0.50
Maximum thermal resistance,
junction to ambient
RthJA
DC operation
For D2PAK and TO-262
50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum
Non-lubricated threads
6 (5)
kgf · cm
(lbf · in)
maximum
12 (10)
Marking device Case style TO-220AB MBR3045CT
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